Datasheet > STGIB30M60TS-LZ

STGIB30M60TS-LZ

更新时间： 2023-12-20 18:44:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
24页	751K
描述
SLLIMM 2nd series IPM, 3-phase inverter, 35 A, 600 V short-circuit rugged IGBT

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STGIB30M60TS-LZ 数据手册

STGIB30M60TS-LZ

Electrical characteristics

T_J= 25 °C unless otherwise specified.

Inverter part

3.1

Table 6. Static

Symbol

Parameter

Test condition

= 600 V, V = V = 15 V

Min.

Typ. Max. Unit

Collector-cut off current

100

µA

CES

boot

= V

= 15 V, V ⁽¹⁾= 0 to 5 V,

Boot

1.55

1.65

2.0

= 30 A

= V

Collector-emitter saturation

voltage

CE(sat)

= 15 V, V ⁽¹⁾= 0 to 5 V,

Boot

= 35 A

⁽¹⁾= 0 V, I = 30 A

1.8

2.5

Diode forward voltage

⁽¹⁾= 0 V, I = 35 A

1.95

1. Applied among HINx, LINx and GND for x = U, V, W

Table 7. Inductive load switching time and energy

Symbol

Parameter

Turn-on time

Test condition

Min.

Typ. Max. Unit

(1)

464

274

475

169

415

1245

645

131

483

296

464

162

450

1580

750

153

(1)

Cross-over time on

Turn-off time

c(on)

(1)

µJ

off

(1)

= 300 V, V = V

= 15 V,

boot

Cross-over time off

Reverse recovery time

Turn-on switching energy

Turn-off switching energy

Reverse recovery energy

Turn-on time

c(off)

⁽²⁾= 0 to 5 V, I = 30 A

off

(1)

Cross-over time on

Turn-off time

c(on)

(1)

off

(1)

= 300 V, V = V

= 15 V,

boot

Cross-over time off

Reverse recovery time

Turn-on switching energy

Turn-off switching energy

Reverse recovery energy

c(off)

⁽²⁾= 0 to 5 V, I = 35 A

off

and t include the propagation delay time of the internal drive. t

and t are the switching times of the IGBT itself

c(off)

off

c(on)

under the internally given gate driving condition.

2. Applied among HINx, LINx and GND for x = U, V, W

DS13455 - Rev 2

page 6/24

1...3 4 567 8 9...24

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