Datasheet > STGIB20M60S-XZ

STGIB20M60S-XZ

更新时间： 2023-12-20 18:44:33

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
23页	628K
描述
SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBTs

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STGIB20M60S-XZ 数据手册

STGIB20M60S-XZ

Electrical characteristics

T_J= 25 °C unless otherwise specified.

Inverter part

3.1

Table 6. Static

Symbol

Parameter

Test condition

= 600 V, V = V = 15 V

Min.

Typ.

Max.

Unit

Collector cut-off current

100

µA

CES

boot

= V

= 15 V, V ⁽¹⁾= 0 to 5 V

Boot

1.55

1.75

2.0

= 20 A

= V

Collector-emitter saturation

voltage

CE(sat)

= 15 V, V ⁽¹⁾= 0 to 5 V,

Boot

= 25 A

⁽¹⁾= 0 V, I = 20 A

1.8

2.5

Diode forward voltage

⁽¹⁾= 0 V, I = 25 A

1.95

1. Applied among HINx, LINx and GND for x = U, V, W

Table 7. Inductive load switching time and energy

Symbol

Parameter

Test condition

Min.

Typ.

422

205

422

182

310

655

460

120

469

240

400

170

320

974

550

126

Max.

Unit

(1)

Turn-on time

(1)

Cross-over time on

Turn-off time

c(on)

(1)

off

(1)

= 300 V, V = V

= 15 V,

boot

Cross-over time off

Reverse recovery time

Turn-on switching energy

Turn-off switching energy

Reverse recovery energy

Turn-on time

c(off)

⁽²⁾= 0 to 5 V, I = 20 A

off

µJ

(1)

Cross-over time on

Turn-off time

c(on)

(1)

off

(1)

= 300 V, V = V

= 15 V,

boot

Cross-over time off

Reverse recovery time

Turn-on switching energy

Turn-off switching energy

Reverse recovery energy

c(off)

⁽²⁾= 0 to 5 V, I = 25 A

off

and t include the propagation delay time of the internal drive. t

and t are the switching times of the IGBT itself

C(off)

off

C(on)

under the internally given gate driving condition.

2. Applied among HINx, LINx and GND for x = U, V, W

DS13493 - Rev 2

page 6/23

1...3 4 567 8 9...23

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