Datasheet > STFI10N62K3

STFI10N62K3

更新时间： 2024-10-01 12:01:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	954K
描述
N-channel 620 V, 0.68 Î© typ., 8.4 A SuperMESH3â¢

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STFI10N62K3 数据手册

STF10N62K3, STFI10N62K3,

STI10N62K3, STP10N62K3

N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™

Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages

Datasheet − production data

Features

R_DS(on)

max

Type

V_DSS

I_D

P_w

STF10N62K3

STFI10N62K3

STI10N62K3

STP10N62K3

8.4 A⁽¹⁾30 W

TO-220FP

I²PAKFP

620 V < 0.75 Ω

TAB

8.4 A

125 W

1. Limited by package

■ 100% avalanche tested

I²PAK

TO-220

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitances

Figure 1.

Internal schematic diagram

■ Improved diode reverse recovery

characteristics

'ꢀꢁꢂꢃ7$%ꢄ

■ Zener-protected

Applications

■ Switching applications

*ꢀꢅꢄ

Description

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

These devices boast an extremely low on-

resistance, superior dynamic performance and

high avalanche capability, rendering them suitable

for the most demanding applications.

6ꢀꢆꢄ

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF10N62K3

STFI10N62K3

STI10N62K3

STP10N62K3

10N62K3

TO-220FP

I²PAKFP

I²PAK

Tube

TO-220

September 2012

Doc ID 15640 Rev 4

1/17

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...17

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