Datasheet > STFI4N62K3

STFI4N62K3

更新时间： 2024-10-01 12:29:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
19页	1061K
描述
N-channel 620 V, 1.7 Î© typ., 3.8 A SuperMESH3 Power MOSFET

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数据手册

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STFI4N62K3 数据手册

STF4N62K3, STFI4N62K3, STI4N62K3,

STP4N62K3, STU4N62K3

N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET

in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages

Datasheet — production data

Features

TAB

Order codes V_DSSR_DS(on)max

I_D

P_TOT

STF4N62K3

STFI4N62K3

25 W

TO-220FP

I²PAK

STI4N62K3

STP4N62K3

STU4N62K3

620 V

< 2 Ω

3.8 A 70 W

70 W

TAB

70 W

TAB

I²PAKFP

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

TO-220

IPAK

■ Very low intrinsic capacitance

Figure 1.

Internal schematic diagram

■ Improved diode reverse recovery

characteristics

D(2,TAB)

■ Zener-protected

Applications

■ Switching applications

G(1)

Description

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

These devices boast an extremely low on-

resistance, superior dynamic performance and

high avalanche capability, rendering them suitable

for the most demanding applications.

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF4N62K3

STFI4N62K3

STI4N62K3

STP4N62K3

STU4N62K3

TO-220FP

I²PAKFP

I²PAK

4N62K3

Tube

TO-220

IPAK

August 2012

Doc ID 17548 Rev 4

1/19

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...19

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