Datasheet > STB11NM80_07

STB11NM80_07

更新时间： 2024-09-28 03:46:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	467K
描述
N-channel 800 V - 0.35 ヘ - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh⑩ Power MOSFET

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数据手册

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STB11NM80_07 数据手册

STB11NM80 - STF11NM80

STP11NM80 - STW11NM80

N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D²PAK - TO-247

MDmesh™ Power MOSFET

Features

Type

V_DSS

R_DS(on)R_DS(on)*Q_g

I_D

STB11NM80 800 V < 0.40 Ω

STF11NM80 800 V < 0.40 Ω

STP11NM80 800 V < 0.40 Ω

STW11NM80 800 V < 0.40 Ω

14Ω*nC

11 A

D²PAK

TO-247

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Best R

*Qg in the industry

TO-220

DS(on)

TO-220FP

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

The MDmesh™ associates the multiple drain

process with the Company’s PowerMesh™

horizontal layout assuring an outstanding low on-

resistance. The adoption of the Company’s

proprietary strip technique yields overall dynamic

performance that is significantly better than that of

similar competition’s products.

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STB11NM80

STF11NM80

STP11NM80

STW11NM80

B11NM80

F11NM80

P11NM80

W11NM80

Tape & reel

Tube

TO-220FP

TO-220

Tube

TO-247

Tube

December 2007

Rev 9

1/17

www.st.com

12 3 4 5 6 7...17

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