Datasheet > SXT-289

SXT-289

更新时间： 2024-02-16 05:27:39

品牌	Logo	应用领域
STANFORD		放大器功率放大器
页数	文件大小	规格书
8页	275K
描述
1800-2500 MHz Power Amplifier

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SXT-289 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	TO-243	Reach Compliance Code：	compliant
风险等级：	5.91	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	TO-243
电源：	8 V	子类别：	RF/Microwave Amplifiers
最大压摆率：	120 mA	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

SXT-289 数据手册

Product Description

SXT-289

Stanford Microdevices’ SXT-289 amplifier is a high efficiency

GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed

in low-cost surface-mountable plastic package. These HBT

MMICs are fabricated using molecular beam epitaxial growth

technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

1800-2500 MHz Power Amplifier

These amplifiers are specially designed for use as driver

devices for infrastructure equipment in the 1800-2500 MHz

cellular, ISM, WLL and Wideband CDMA applications.

Product Features

•Patented High Reliability GaAs HBT Technology

• High Output 3rd Order Intercept : +42 dBm typ.

Its high linearity makes it an ideal choice for multi-carrier as

well as digital applications.

• ^aS^tu²r⁴fa⁵c⁰e^M-M^Ho^zuntable Power Plastic Package

Typical IP3, P1dB, Gain

IP3

P1dB

Gain

Applications

• PCS Systems

• WLL, Wideband CDMA Systems

• ISM Systems

1960 MHz

2140 MHz

2450 MHz

Parameters: Test Conditions:

Z₀= 50 Ohms, Ta = 25C

Symbol

Units

Min.

Typ.

Max.

f = 1960 MHz

f = 2140 MHz

f = 2450 MHz

dBm

23.5

23.0

P_1dB

Output Power at 1dB Compression

Small signal gain

f = 1960 MHz

f = 2140 MHz

f = 2450 MHz

15.0

13.8

S₂₁

S₁₁

IP₃

13.5

16.6

f = 1960 MHz

f = 2140 MHz

f = 2450 MHz

1.4:1

1.6:1

Input VSWR

f = 1960 MHz

f = 2140 MHz

f = 2450 MHz

dBm

41.0

40.0

42.0

Output Third Order Intercept Point

37.5

(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)

f = 1960 MHz

f = 2140 MHz

f = 2450 MHz

4.4

4.5

5.4

Noise Figure

Vs = 8V

I_d

Device Current

Rbias = 27 ohms

Vdevice = 5 V typ.

105

108

120

R_th, j-l

Thermal Resistance (junction - lead)

° C/W

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are

subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not

authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101157 Rev D

12 3 4 5 6 7 8

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