SXTA42TA PDF预览

SXTA42TA

更新时间: 2025-09-27 21:19:47
品牌 Logo 应用领域
捷特科 - ZETEX 开关晶体管
页数 文件大小 规格书
1页 20K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon

SXTA42TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.47外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzVCEsat-Max:0.5 V
Base Number Matches:1

SXTA42TA 数据手册

  
SOT89 NPN SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
SXTA42  
ISSUE 3 – JANUARY 1996  
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
SXTA92  
SID  
C
E
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
Collector-Base Voltage  
300  
V
V
Collector-Emitter Voltage  
300  
Emitter-Base Voltage  
6
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
500  
1
mA  
W
°C  
Ptot  
Tj:Tstg  
-65 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
300  
300  
6
V
IC=100µA, IE=0  
Collector-Emitter  
Breakdown Voltage  
V
IC=1mA, IB=0*  
Emitter-Base  
Breakdown Voltage  
V
IE=100µA, IC=0  
Collector Cut-Off  
Current  
0.1  
VCB=200V, IE=0  
µA  
Emitter Cut-Off Current  
IEBO  
0.1  
0.5  
VEB=6V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
V
IC=20mA, IB=2mA*  
IC=20mA, IB=2mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
hFE  
0.9  
V
Static Forward Current  
Transfer Ratio  
25  
40  
40  
IC=1mA, VCE=10V*  
IC=10mA, VCE=10V*  
IC=30mA, VCE=10V*  
Transition  
Frequency  
fT  
50  
MHz  
pF  
IC=10mA, VCE=20V  
f=20MHz  
Output Capacitance  
Cobo  
6
VCB=20V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMTA42 datasheet.  
3 - 306  

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