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SXTA42

更新时间: 2024-02-22 08:32:09
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管开关高压局域网
页数 文件大小 规格书
1页 24K
描述
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SXTA42 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.49
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

SXTA42 数据手册

  
SOT89 NPN SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
SXTA42  
ISSUE 3 – JANUARY 1996  
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
SXTA92  
SID  
C
E
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
Collector-Base Voltage  
300  
V
V
Collector-Emitter Voltage  
300  
Emitter-Base Voltage  
6
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
500  
1
mA  
W
°C  
Ptot  
Tj:Tstg  
-65 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
300  
300  
6
V
IC=100µA, IE=0  
Collector-Emitter  
Breakdown Voltage  
V
IC=1mA, IB=0*  
Emitter-Base  
Breakdown Voltage  
V
IE=100µA, IC=0  
Collector Cut-Off  
Current  
0.1  
VCB=200V, IE=0  
µA  
Emitter Cut-Off Current  
IEBO  
0.1  
0.5  
VEB=6V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
V
IC=20mA, IB=2mA*  
IC=20mA, IB=2mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
hFE  
0.9  
V
Static Forward Current  
Transfer Ratio  
25  
40  
40  
IC=1mA, VCE=10V*  
IC=10mA, VCE=10V*  
IC=30mA, VCE=10V*  
Transition  
Frequency  
fT  
50  
MHz  
pF  
IC=10mA, VCE=20V  
f=20MHz  
Output Capacitance  
Cobo  
6
VCB=20V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMTA42 datasheet.  
3 - 306  

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