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SSW408

更新时间: 2022-09-24 22:12:28
品牌 Logo 应用领域
STANFORD 开关光电二极管
页数 文件大小 规格书
2页 107K
描述
DC-4 GHz High Power GaAs MMIC SPDT Switch

SSW408 数据手册

 浏览型号SSW408的Datasheet PDF文件第2页 
Preliminary  
Product Description  
Stanford Microdevices’ SSW-408 is a high performance Gal-  
lium Arsenide Field Effect Transistor MMIC switch housed in a  
low-cost surface mountable small outline plastic package.  
SSW-408  
DC-4 GHz High Power GaAs MMIC  
SPDT Switch  
This single-pole, double-throw reflective switch consumes less  
than 50uA and can operate with positive or negative 3V to 8V  
supply voltages, making it suitable for use in both infrastruc-  
ture and subscriber equipment. This switch can be used in all  
analog and digital wireless communication systems including  
(but not limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11,  
CDPD and GSM.  
Product Features  
At +5V or –5V bias, typical output power at 1dB compression  
is 3 watts. 1dB output power over 4 watts and IP3 over +55dBm  
may be achieved with higher control voltages.  
High Compression Point : up to 4 Watts  
HIgh Linearity : TOIP +55dBm @2GHz  
Low DC Power Consumption  
Low Insertion Loss : 1.2dB at 2GHz  
Operates from Positive or Negative 3V to 8V  
Supplies  
Isolation vs. Frequency  
VControl = -5 V  
-10  
Low Cost Small Outline Plastic Package  
-20  
dB  
Applications  
-30  
Analog/Digital Wireless Communications  
Spread Spectrum  
-40  
DC  
1
2
3
4
AMPS, PCS, DECT, IS-95, IS-136, 802.11,  
CDPD and GSM.  
GHz  
Electrical Specifications at Ta = 25C  
Parameters & Test  
Symbol  
Units  
Min.  
Typ.  
Max.  
Conditions: Zo = 50 ohms v = +5 or -5V  
Insertion Loss  
f = 0.05 - 1.0 GHz  
f = 1.00 - 2.0 GHz  
f = 2.00 - 4.00 GHz  
dB  
dB  
dB  
0.9  
1.2  
1.5  
1.3  
1.5  
Ins  
Isolation  
f = 0.05 - 1.0 GHz  
f = 1.00 - 2.0 GHz  
f = 2.00 - 4.00 GHz  
dB  
dB  
dB  
24  
18  
28  
22  
18  
Isol  
Input & Output VSWR  
(on port)  
f = 0.05 - 2.0 GHz  
f = 2.00 - 4.0 GHz  
1.2  
1.5  
VSWR on  
VSWR off  
Input & Output VSWR  
(off port)  
f = 0.05 - 2.0 GHz  
f = 2.00 - 4.0 GHz  
1.2  
1.5  
Output Power @ 2.0 GHz  
at 1 dB Compression  
V = +8V or -8V  
V = +5V or -5V  
V = +3V or -3V  
dB  
dB  
dB  
+36  
+34  
+31  
P1dB  
Third Order Intercept  
Device Current  
V = +8V or -8V  
V = +5V or -5V  
V = +3V or -3V  
dB  
dB  
dB  
+55  
+53  
+50  
TO IP  
uA  
40  
10  
Id  
Switching Speed  
10% to 90% or 90% to 10%  
nsec  
Isw  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
EDS-101099 Rev -A  

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