Datasheet > 触发装置 > 可控硅整流器> ST1200C12K0LP

ST1200C12K0LP

更新时间： 2024-02-24 05:55:36

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	145K
描述
Phase Control Thyristors (Stud Version), 1650 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ST1200C12K0LP 数据手册

ST1200C..KP Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 1650 A

TRIGGERING

VALUES

PARAMETER

SYMBOL

TEST CONDITIONS

UNITS

TYP.

MAX.

Maximum peak gate power

P_GM

P_G(AV)

I_GM

T_J= T_Jmaximum, t_p≤ 5 ms

Maximum average gate power

T_J= T_Jmaximum, f = 50 Hz, d% = 50

Maximum peak positive gate current

Maximum peak positive gate voltage

Maximum peak negative gate voltage

3.0

5.0

+ V_GM

- V_GM

T_J= T_Jmaximum, t_p≤ 5 ms

T_J= - 40 °C

T_J= 25 °C

200

100

200

DC gate current required to trigger

DC gate voltage required to trigger

I_GT

Maximum required gate trigger/

T_J= 125 °C

T_J= - 40 °C

T_J= 25 °C

T_J= 125 °C

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

1.4

1.1

0.9

V_GT

3.0

Maximum gate current/voltage

not to trigger is the maximum

T_J= T_Jmaximum value which will not trigger any

unit with rated V_DRManode to

cathode applied

DC gate current not to trigger

DC gate voltage not to trigger

I_GD

V_GD

0.25

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction

temperature range

T_J

- 40 to 125

°C

Maximum storage temperature range

T_Stg

- 40 to 150

0.0.42

0.021

DC operation single side cooled

DC operation double side cooled

DC operation single side cooled

DC operation double side cooled

Maximum thermal resistance,

junction to heatsink

R_thJ-hs

K/W

0.006

Maximum thermal resistance,

case to heatsink

R_thC-hs

0.003

24 500

(2500)

(kg)

Mounting force, 10 %

Approximate weight

Case style

425

See dimensions - link at the end of datasheet

A-24 (K-PUK)

ΔR_thJCCONDUCTION

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

CONDUCTION ANGLE

TEST CONDITIONS

UNITS

SINGLE SIDE

0.003

DOUBLE SIDE

0.003

SINGLE SIDE

0.002

DOUBLE SIDE

0.002

180°

120°

90°

0.004

0.005

T_J= T_Jmaximum

K/W

60°

0.007

30°

0.012

Note

•

The table above shows the increment of thermal resistance R_thJCwhen devices operate at different conduction angles than DC

Document Number: 94394

Revision: 23-Apr-10

For technical questions, contact: indmodules@vishay.com

www.vishay.com

1 234 5 6 7 8

下载PDF

与ST1200C12K0LP相关器件

型号	品牌	描述	获取价格	数据表
ST1200C12K0LPBF	VISHAY	Silicon Controlled Rectifier, 3080A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS C	获取价格
ST1200C12K0P	VISHAY	Phase Control Thyristors	获取价格
ST1200C12K0PBF	VISHAY	Silicon Controlled Rectifier, 3080A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS C	获取价格
ST1200C12K1	INFINEON	PHASE CONTROL THYRISTORS	获取价格
ST1200C12K1	VISHAY	Phase Control Thyristors	获取价格
ST1200C12K1L	INFINEON	PHASE CONTROL THYRISTORS	获取价格