SST440
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST440
The SST440 is a tightly matched Monolithic Dual N-Channel JFET
FEATURES
The SST440 are monolithic dual JFETs mounted in a
Direct Replacement for SILICONIX SST440
HIGH CMRR
SOIC package. The monolithic dual chip design
reduces parasitics and gives better performance at very
high frequencies while ensuring extremely tight
matching. These devices are an excellent choice for
use as wideband differential amplifiers in demanding
test and measurement applications. The SST440 is a
direct replacement for discontinued Siliconix SST440.
CMRR ≥ 85dB
IGSS ≤ 1 pA
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
‐65°C to +150°C
‐55°C to +135°C
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
500mW
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
50mA
SST440 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
‐25V
‐25V
±50V
High-Speed Comparators
Impedance Converters and vibrations
detectors.
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
|VGS1 – VGS2
CHARACTERISTIC
Differential Gate to Source Cutoff Voltage
MIN
TYP
MAX
10
UNITS
mV
CONDITIONS
VDG = 10V, ID = 5mA
|
∆|VGS1 – VGS2 | / ∆T
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
20
µV/°C
VDG = 10V, ID = 5mA
TA = ‐55°C to +125°C
VDS = 10V, VGS = 0V
IDSS1 / IDSS2
0.07
2
Click To Buy
Gfs1 / Gfs2
Forward Transconductance Ratio
0.97
VDS = 10V, ID = 5mA, f = 1kHz
CMRR
Common Mode Rejection Ratio
85
dB
VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
IDSS
IGSS
IG
CHARACTERISTICS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current3
MIN.
‐25
‐1
TYP.
MAX.
UNITS
V
V
mA
pA
pA
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 5mA
‐3.5
15
‐1
‐6
30
‐500
‐500
6
Gate Operating Current
‐1
gfs
gos
CISS
CRSS
en
Forward Transconductance
Output Conductance
Input Capacitance
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
4.5
6
70
3
1
4
9
200
mS
µS
pF
pF
nV/√Hz
VDS = 10V, ID= 5mA, f = 1kHz
VDS = 10V, ID = 5mA, f = 1MHz
VDS = 10V, ID = 5mA, f = 10kHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
SOIC (Top View)
Available Packages:
SST440 in SOIC
SST440 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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