16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1621 / SST34HF1641
SST34HF1621/ 164116 Mb CSF (x16) + 2/4 Mb SRAM (x16) ComboMemories
Data Sheet
FEATURES:
•
•
Flash Organization: 1M x16
Dual-Bank Architecture for Concurrent
Read/Write Operation
– 16 Mbit: 12 Mbit + 4 Mbit
SRAM Organization:
•
•
Block-Erase Capability
– Uniform 32 KWord blocks
Read Access Time
– Flash: 70 and 90 ns
– SRAM: 70 and 90 ns
•
– 2 Mbit: 256K x8 or 128K x16
– 4 Mbit: 512K x8 or 256K x16
•
•
Latched Address and Data
Fast Erase and Word-Program:
•
•
Single 2.7-3.3V Read and Write Operations
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 25 mA (typical)
– Standby Current: 20 µA (typical)
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time: 8 seconds (typical)
•
•
•
•
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
Hardware Sector Protection (WP#)
– Protects 4 outer most sectors (4 KWord) in the
larger bank by holding WP# low and unprotects
by holding WP# high
•
•
•
CMOS I/O Compatibility
JEDEC Standard Command Set
Conforms to Common Flash Memory Interface
(CFI)
Packages Available
•
•
Hardware Reset Pin (RST#)
– Resets the internal state machine to reading
data array
Sector-Erase Capability
– Uniform 1 KWord sectors
•
– 56-ball LFBGA (8mm x 10mm)
PRODUCT DESCRIPTION
The SST34HF1621/1641 ComboMemory devices inte-
grate a 1M x16 CMOS flash memory bank with a 256K x8/
128K x16 or 512K x8/ 256K x16 CMOS SRAM memory
bank in a Multi-Chip Package (MCP). These devices are
fabricated using SST’s proprietary, high-performance
CMOS SuperFlash technology incorporating the split-gate
cell design and thick oxide tunneling injector to attain better
reliability and manufacturability compared with alternate
approaches. The SST34HF1621/1641 devices are ideal for
applications such as cellular phones, GPSs, PDAs and
other portable electronic devices in a low power and small
form factor system.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles. The SST34HF1621/1641 devices
offer a guaranteed endurance of 10,000 cycles. Data
retention is rated at greater than 100 years. With high per-
formance Word-Program, the flash memory banks provide
a typical Word-Program time of 14 µsec. The entire flash
memory bank can be erased and programmed word-by-
word in typically 8 seconds for the SST34HF1621/1641,
when using interface features such as Toggle Bit or Data#
Polling to indicate the completion of Program operation. To
protect against inadvertent flash write, the SST34HF1621/
1641 devices contain on-chip hardware and software data
protection schemes.
The SST34HF1621/1641 features dual flash memory bank
architecture allowing for concurrent operations between the
two flash memory banks and the SRAM. The devices can
read data from either bank while an Erase or Program
operation is in progress in the opposite bank. The two flash
memory banks are partitioned into 4 Mbit and 12 Mbit with
top or bottom sector protection options for storing boot
code, program code, configuration/parameter data and
user data.
©2001 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Concurrent SuperFlash and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
S71172-05-000 10/01
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