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SST30VR043-150-E-WH PDF预览

SST30VR043-150-E-WH

更新时间: 2024-09-26 23:34:31
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
12页 534K
描述
MIXED MEMORY|SRAM+ROM|CMOS|TSSOP|32PIN|PLASTIC

SST30VR043-150-E-WH 数据手册

 浏览型号SST30VR043-150-E-WH的Datasheet PDF文件第2页浏览型号SST30VR043-150-E-WH的Datasheet PDF文件第3页浏览型号SST30VR043-150-E-WH的Datasheet PDF文件第4页浏览型号SST30VR043-150-E-WH的Datasheet PDF文件第5页浏览型号SST30VR043-150-E-WH的Datasheet PDF文件第6页浏览型号SST30VR043-150-E-WH的Datasheet PDF文件第7页 
4 Mbit ROM + 1 Mbit / 256 Kbit SRAM  
ROM/RAM Combo  
SST30VR041 / SST30VR043  
SST30VR041 / 0434Mb Mask ROM (x8) + 1Mb / 256Kb SRAM (x8) Combo  
Data Sheet  
FEATURES:  
ROM + SRAM ROM/RAM Combo  
– SST30VR041: 512K x8 ROM + 128K x8 SRAM  
– SST30VR043: 512K x8 ROM + 32K x8 SRAM  
Low Power Dissipation:  
– Standby: 1.0 µW (Typical)  
– Operating: 3.0 mW (Typical)  
ROM/RAM combo on a monolithic chip  
Fully Static Operation  
– No clock or refresh required  
Three-state Outputs  
Packages Available  
– 32-lead TSOP (8mm x14mm)  
Equivalent ComboMemory (Flash + SRAM):  
SST31LF041A for code development and  
pre-production  
Wide Operating Voltage Range: 2.7-3.3V  
Chip Access Time  
– SST30VR041 70 ns and 150 ns  
– SST30VR043 150 ns  
PRODUCT DESCRIPTION  
The SST30VR041/043 are ROM/RAM combo chips  
consisting of 4 Mbit Read-Only Memory (ROM) orga-  
nized as 512 KByte and a Static Random Access  
Memory (SRAM) organized as either 128 or 32 KByte.  
Output Enable Input (OE#) is pin-shared with  
RAMCS# (RAM Enable Input) signal in order to main-  
tain the standard 32-lead TSOP package.  
The SST30VR041/043 have an output enable input for pre-  
cise control of the data outputs. It also has two (2) separate  
chip enable inputs for selection of either SRAM or ROM  
and for minimizing current drain during power-down mode.  
The SST30VR041/043 is particularly well suited for use in  
low voltage (2.7-3.3V) supplies such as pagers, organizers  
and other handheld applications.  
The device is fabricated using SST’s advanced CMOS low  
power process technology.  
FUNCTIONAL BLOCK DIAGRAM  
RAMCS#  
ROMCS#  
OE#/RAMCS#  
WE#  
OE#  
WE#  
RAM  
DQ -DQ  
7
0
ROMCS#  
OE#  
A
-A  
0
ROM  
MS  
381 ILL B1.2  
Note: A  
= Most Significant Address  
MS  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
ComboMemory is a trademark of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71134-02-000 2/02  
1
381  

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