Datasheet > SST214

SST214

更新时间： 2022-12-09 03:32:25

品牌	Logo	应用领域
Linear Systems		开关
页数	文件大小	规格书
2页	512K
描述
N-CHANNEL LATERAL DMOS SWITCH

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SST214 数据手册

SD-SST210/214

N-CHANNEL LATERAL

DMOS SWITCH

Linear Integrated Systems

Product Summary

Part Number

SD210DE

SD214DE

SST210

Min(V)

Max (V)

Max(Ω)

Max (pF)

0.5

t Max (ns)

(BR)DS

GS(th)

DS(on)

rss

1.5

45 @ V

50 @ V

= 10V

1.5

0.5

SST214

0.5

Features

Benefits

Applications

• Ultra-High Speed Switching—t : 1 ns

• High-Speed System Performance

• Fast Analog Switch

• Fast Sample-and-Holds

• Pixel-Rate Switching

• DAC Deglitchers

• Ultra-Low Reverse Capacitance: 0.2 pF

• Low Guaranteed r @5 V

• Low Turn-On Threshold Voltage

• N-Channel Enhancement Mode

• Low Insertion Loss at High Frequencies

• Low Transfer Signal Loss

• Simple Driver Requirement

• Single Supply Operation

• High-Speed Driver

Description

diode which results in lower gate leakage and ±voltage capability

from gate to substrate. A poly-silicon gate is featured for

manufacturing reliability.

The SD210DE/214DE are enhancement-mode MOSFETs

designed for high speed low-glitch switching in audio, video,

and high-frequency applications. The SD214DE is normally used

for 10-V analog switching. These MOSFETs utilize lateral

construction to achieve low capacitance and ultra-fast switching

speeds. These MOSFETs do not have a gate protection Zener

For similar products see: quad array—SD5000/5400 series, and

Zener protected—SD211DE/SST211 series.

Top View

SD210DE SD214DE

SST210 SST214

Absolute Maximum Ratings (T_A= 25⁰C Unless Otherwise Noted)

Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V

Gate-Substrate Voltage ......................................................................... ± 30 V

Source-Substrate Voltage

(SD210DE) ....................................... 15 V

(SD214DE) ....................................... 25 V

Drain-Source Voltage

Source-Drain Voltage

Drain-Substrate Voltage

(SD210DE) ....................................... 30 V

(SD214DE) ....................................... 20 V

(SD210DE) ....................................... 10 V

(SD214DE) ....................................... 20 V

(SD210DE) ....................................... 30 V

(SD214DE) ....................................... 25 V

Drain Current ........................................................................................ 50 mA

Lead Temperature (1/16" from case for 10 seconds) ............................. 300⁰C

Storage Temperature .................................................................... -65 to 150⁰C

Operating Junction Temperature ................................................. -55 to 125⁰C

Power Dissipation^a.................................................................................................................................... 300 mW

Notes:

a. Derate 3 mW/⁰C above 25⁰C

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Linear Integrated Systems

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与SST214相关器件

型号	品牌	描述	获取价格	数据表
SST215	CALOGIC	FAST DMOS FET Switches N-Channel Enhancement-Mode	获取价格
SST215	Linear Systems	HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS	获取价格
SST215DE	MICROSS	N-Channel DMOS Switch - Zener Protected	获取价格
SST215-LF	CALOGIC	Transistor	获取价格
SST215T	TEMIC	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Meta	获取价格
SST215T1	CALOGIC	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Meta	获取价格

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