Datasheet > SSRF02N65SL

SSRF02N65SL

更新时间： 2024-10-03 01:17:59

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
5页	577K
描述
N-Ch Enhancement Mode Power MOSFET

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SSRF02N65SL 数据手册

SSRF02N65SL

2A , 650V , R_DS(ON)4.8

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

ITO-220

DESCRIPTION

The SSRF02N65SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent R_DS(on)and gate charge for most of the synchronous

buck converter applications .

FEATURES

ꢀ

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

Drain

Millimeter

Min. Max.

Gate

REF.

Min.

Max.

14.60

9.50

12.60

4.30

2.30

0.30

16.50

10.50

14.00

5.10

3.2

2.70

0.90

0.50

2.34

2.40

φ 3.0

4.00

1.50

0.95

2.74

3.60

φ 3.4

Source

3.10

0.75

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

650

±30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain Current

Pulsed Drain Current

I_D

T_C=100°C

1.3

I_DM

P_D

T_C=25°C

Derate above 25°C

Total Power Dissipation

0.2

Single Pulse Avalanche Energy ¹

E_AS

100

-55~150

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

Maximum Thermal Resistance Junction-Case

Notes:

R_θJA

R_θJC

120

°C / W

1. L=30mH,I_AS=2.37A, V_DD=60V, R_G=25Ω, Starting T_J=25°C

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Sep-2013 Rev. A

Page 1 of 5

12 3 4 5

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