是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.9 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 28 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSR1N60B | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
SSR1N60BTF | ROCHESTER |
获取价格 |
0.9A, 600V, 12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
SSR1N60BTM | ROCHESTER |
获取价格 |
暂无描述 | |
SSR1N60BTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Meta | |
SSR1N60BTM-WS | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SSR2 | ETC |
获取价格 |
ROSETTENKNOPF SELBSTMONTAGE M8 10ST | |
SSR20040CTR | SSDI |
获取价格 |
Rectifier Diode, Schottky, 100A, 40V V(RRM), | |
SSR2008CAM | SSDI |
获取价格 |
20 A, 80 V Centertap Schottky Rectifier | |
SSR2008CAMDB | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 80V V(RRM), Silicon, TO-254AA, HERMETI | |
SSR2008CAMUB | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 80V V(RRM), Silicon, TO-254AA, HERMETI |