Datasheet > SSM04N70BGP-A

SSM04N70BGP-A

更新时间： 2024-09-21 06:14:07

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N-channel Enhancement-mode Power MOSFET

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SSM04N70BGP-A 数据手册

SSM04N70BGP-A

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM04N70BGP-A achieves fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for high voltage applications such as AC/DC

converters, SMPS and general off-line switching circuits.

BV_DSS

R_DS(ON)

I_D

650V

2.4W

Pb-free; RoHS-compliant TO-220

The SSM04N70BGP-A is in TO-220 for through-hole

mounting where a small footprint is required on the board,

and/or an external heatsink is to be attached.

These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

TO-220 (suffix P)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

650

±30

Units

Drain-source voltage

Gate-source voltage

V_GS

Continuous drain current, T = 25°C

I_D

T = 100°C

2.5

I_DM

P_D

Pulsed drain current¹

Total power dissipation, T = 25°C

62.5

Linear derating factor

Single pulse avalanche energy³

0.5

W/°C

E_AS

I_AR

100

Avalanche current

E_AR

T_STG

T_J

Repetitive avalanche energy

Storage temperature range

Operating junction temperature range

°C

-55 to 150

°C

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

°C/W

ΘJC

ΘJA

Maximum thermal resistance, junction-case

Maximum thermal resistance, junction-ambient

Notes:

1. Pulse width must be limited to avoid exceeding the safe operating area.

2. Pulse width <300us, duty cycle <2%.

3. Starting Tj = 25°C, V_DD=50V , L=25mH , R_G=25Ω , I_AS= 4A.

9/29/2006 Rev.3.1

www.SiliconStandard.com

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