Datasheet > SSM01N60H

SSM01N60H

更新时间： 2024-01-14 10:17:21

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	106K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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中文翻译

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技术参数
数据手册

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SSM01N60H 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

SSM01N60H 数据手册

SSM01N60H,J

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Dynamic dv/dt rating

Repetitive-avalanche rated

Fast switching

BV_DSS

R_DS(ON)

I_D

600V

8Ω

1.6A

Simple drive requirement

Description

The SSM01N60H is supplied in the industry-standard TO-252

TO-252 (H)

TO-251 (J)

package, which is widely preferred for commercial and industrial

surface mount applications, and is well suited for AC/DC converters. The

through-hole version (SSM01N60J) is available for low-footprint applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 30

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

1.6

P_D@ T_C=25°C

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.31

W/°C

E_AS

I_AR

Avalanche Current

1.6

E_AR

T_STG

T_J

Repetitive Avalanche Energy

Storage Temperature Range

Operating Junction Temperature Range

0.5

°C

-55 to 150

Thermal Data

Symbol

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Value

3.2

Unit

Rthj-c

Max.

°C/W

Rthj-a

110

Rev.2.02 4/06/2004

www.SiliconStandard.com

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