Datasheet > SSM02N60P

SSM02N60P

更新时间： 2024-01-25 16:57:56

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描述
N CHANNEL ENHANCEMENT MODE

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数据手册

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SSM02N60P 数据手册

SSM02N60P

N-CHANNEL ENHANCEMENT-MODE

POWER MOSFET

Repetitive-avalanche rated

Fast-switching

BV_DSS

R_DS(ON)

I_D

600V

8Ω

Simple drive requirement

TO-220

Description

The TO-220 package is widely preferred for commercial and industrial

applications. The SSM02N60P is well suited for DC/DC and AC/DC

converters in telecom, industrial and consumer applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

1.26

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy²

0.31

W/℃

E_AS

I_AR

130

Avalanche Current

E_AR

T_STG

T_J

Repetitive Avalanche Energy

Storage Temperature Range

Operating Junction Temperature Range

℃

-55 to 150

Thermal Data

Symbol

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Value

Unit

℃/W

Rthj-c

Max.

3.2

Rthj-a

Rev.2.01 6/06/2003

www.SiliconStandard.com

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