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SSM0410S PDF预览

SSM0410S

更新时间: 2024-01-07 20:17:13
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 399K
描述
N-Channel Enhancement Mode Power MOSFET

SSM0410S 数据手册

 浏览型号SSM0410S的Datasheet PDF文件第2页浏览型号SSM0410S的Datasheet PDF文件第3页浏览型号SSM0410S的Datasheet PDF文件第4页 
SSM0410S  
3A , 100V , RDS(ON) 310 m  
N-Channel Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
SOT-223  
The SSM0410S provide the designer with the best  
combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness. The SOT-223 package  
is universally preferred for all commercial-industrial surface  
mount applications and suited for low voltage applications  
such as DC/DC converters.  
A
M
4
Top View  
C B  
1
2
3
K
F
L
E
FEATURES  
D
Lower Gate Charge  
Simple Drive Requirement  
Fast Switching Characteristic  
G
H
J
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
6.20  
6.70  
3.30  
1.42  
4.50  
0.60  
Max.  
6.70  
7.30  
3.70  
1.90  
4.70  
0.82  
Min.  
-
-
0.25  
-
Max.  
0.10  
-
0.35  
-
MARKING  
A
B
C
D
E
F
G
H
J
K
L
0410S  
2.30 REF.  
  
= Date code  
M
2.90  
3.10  
D
PACKAGE INFORMATION  
  
Package  
MPQ  
2.5K  
Leader Size  
SOT-223  
13 inch  
  
G
  
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
VDS  
Rating  
100  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
±20  
V
TA=25°C  
TA=70°C  
3
A
Continuous Drain Current 1@VGS=10V  
ID  
1.7  
A
Pulsed Drain Current 2  
Power Dissipation 3  
IDM  
5.5  
A
TA=25°C  
PD  
1.5  
W
°C  
Operating Junction & Storage Temperature  
TJ, TSTG  
-65~150  
Thermal Resistance Rating  
Thermal Resistance Junction-Ambient1(Max).  
Thermal Resistance Junction-Case1(Max).  
RθJA  
RθJC  
85  
36  
°C / W  
°C / W  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
27-Jun-2013 Rev.B  
Page 1 of 4  

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