SSF2312 PDF预览

SSF2312

更新时间: 2025-07-23 06:14:23
品牌 Logo 应用领域
新硅能 - SILIKRON 电池
页数 文件大小 规格书
5页 285K
描述
Battery protection

SSF2312 数据手册

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SSF2312  
D
DESCRIPTION  
The SSF2312 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and operation  
with gate voltages as low as 2.5V. This device is suitable  
for use as a Battery protection or in other Switching  
application.  
G
S
Schematic diagram  
GENERAL FEATURES  
VDS = 20V,ID = 4.5A  
D
3
RDS(ON) < 40m@ VGS=2.5V  
RDS(ON) < 33m@ VGS=4.5V  
High Power and current handing capability  
2312  
Lead free product is acquired  
Surface Mount Package  
G
S
2
1
Marking and pin Assignment  
Application  
Battery protection  
Load switch  
Power management  
SOT-23 top view  
PACKAGE MARKING AND ORDERING INFORMATION  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
3000 units  
2312  
SSF2312  
SOT-23  
Ø180mm  
8 mm  
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
±8  
VGS  
4.5  
A
ID  
Drain Current-Continuous@ Current-Pulsed (Note 1)  
13.5  
1.25  
A
IDM  
Maximum Power Dissipation  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
100  
/W  
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
BVDSS  
IDSS  
VGS=0V ID=250μA  
VDS=20V,VGS=0V  
VGS=±8V,VDS=0V  
20  
V
1
μA  
nA  
IGSS  
±100  
ON CHARACTERISTICS (Note 3)  
©Silikron Semiconductor CO.,LTD.  
1
http://www.silikron.com  
v1.1  

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