Datasheet > SSCD202SH

SSCD202SH

更新时间： 2024-10-03 09:05:35

品牌	Logo	应用领域
智威 - ZOWIE		肖特基二极管
页数	文件大小	规格书
2页	40K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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SSCD202SH 数据手册

ZOWIE

Schottky Barrier Diode

(30V / 2.0A)

Objective Specification

SSCD203PSH

FEATURES

OUTLINE DIMENSIONS

Case : 1206-S

Unit : mm

Halogen-free type

Lead free product, compliance to RoHS

Lead less chip form, no lead damage

Lead-free solder joint, no wire bond & lead frame

Low power loss, High efficiency

High current capability

3.40 ± 0.1

0.05

Low forward voltage drop

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

0.70 ± 0.2

APPLICATION

Switching mode power supply applications

Portable equipment battery applications

High frequency rectification

DC / DC Converter

Equivalent : SOD-123

Telecommunication

MARKING

MECHANICAL DATA

Amps class

Cathode mark

Case : Packed with FRP substrate and epoxy underfilled

Terminals : Pure Tin plated (Lead-Free),

solderable per MIL-STD-750, Method 2026.

Polarity : Laser Cathode band marking

Weight : 0.012 gram

Voltage class

Halogen-free type

Small Package

Low VF & Low IR

PACKING

3,000 pieces per 7" (178mm ± 2mm) reel

4 reels per box

6 boxes per carton

Absolute Maximum Ratings (Ta = 25 ^oC)

ITEM

Symbol

Conditions

Rating

Unit

Repetitive peak reverse voltage

Average forward current

VRRM

IF(AV)

2.0

Peak forward surge current

IFSM

8.3ms single half sine-wave

150

^oC

Operating junction temperature Range

Storage temperature Range

TSTG

-55 to +150

Electrical characteristics (Ta = 25 ^oC)

ITEM

Symbol

Conditions

Min.

Typ.

Max.

Unit

Forward voltage (NOTE 1)

IF = 2.0A

0.37

0.44

Repetitive peak reverse current (NOTE 1)

Junction capacitance

IRRM

VR = Max. VRRM , Ta = 25 ^oC

VR = 4V, f = 1.0 MHz

0.03

115

0.15

Rth(JA)

Rth(JL)

Junction to ambient (NOTE 2)

Junction to lead (NOTE 2)

^oC/W

Thermal resistance

NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.

(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.

(3) The objective specification for product development.

REV. 0

2009/06

中文翻译

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