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SSB43L PDF预览

SSB43L

更新时间: 2024-09-20 21:54:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 55K
描述
High-Current Density Surface Mount Schottky Rectifier

SSB43L 数据手册

 浏览型号SSB43L的Datasheet PDF文件第2页 
SSB43L and SSB44  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
High-Current Density Surface Mount Schottky Rectifier  
Reverse Voltage 30 & 40V  
Forward Current 4.0A  
DO-214AA (SMB)  
Cathode Band  
Mounting Pad Layout  
0.086 (2.20)  
0.077 (1.95)  
0.155 (3.94)  
0.130 (3.30)  
0.106 MAX  
(2.69 MAX)  
0.083 MIN  
(2.10 MIN)  
0.180 (4.57)  
0.160 (4.06)  
0.012 (0.305)  
0.006 (0.152)  
0.050 MIN  
(1.27 MIN)  
0.096 (2.44)  
0.084 (2.13)  
0.220 REF  
Dimensions in inches  
and (millimeters)  
0.060 (1.52)  
0.030 (0.76)  
0.008  
(0.203)  
Max.  
0.220 (5.59)  
0.205 (5.21)  
Features  
Mechanical Data  
• Low power loss, high efficiency  
• Low profile surface mount package  
• Built-in strain relief  
• For use in low voltage high frequency inverters, free  
wheeling, and polarity protection applications  
Case: JEDEC DO-214AA molded plastic body  
Terminals: Solder plated, solderable per MIL-STD750,  
Method 2026  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
• Guardring for overvoltage protection  
Polarity: Color band denotes cathode end  
Weight: 0.003 oz., 0.093 g  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
SSB43L  
43L  
30  
SSB44  
S44  
40  
Unit  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
21  
28  
Maximum DC blocking voltage  
Max. average forward rectified current at TL (See Fig. 1)  
30  
40  
IF(AV)  
4.0  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
100  
A
R
70  
23  
θJA  
θJL  
Typical thermal resistance (2)  
°C/W  
R
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10,000  
V/µs  
°C  
–65 to +150  
–65 to +150  
TSTG  
°C  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Typ.  
Max.  
Typ.  
Max.  
Unit  
Maximum instantaneous  
TJ = 25°C  
VF  
0.43  
0.33  
0.45  
0.38  
0.6  
45  
0.45  
0.37  
0.49  
0.42  
0.4  
40  
V
forward voltage at 4.0A(1)  
TJ = 125°C  
Maximum DC reverse current (1)  
at rated DC blocking voltage  
TJ= 25°C  
TJ=125°C  
IR  
35  
25  
mA  
Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle  
(2) Aluminum substrate mounted  
Document Number 88884  
15-Dec-03  
www.vishay.com  
1

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