Datasheet > SSB43L-HE3/5BT

SSB43L-HE3/5BT

更新时间： 2024-02-06 23:17:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	84K
描述
DIODE 4 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

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技术参数
数据手册

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SSB43L-HE3/5BT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.66
Is Samacsys：	N	Base Number Matches：	1

SSB43L-HE3/5BT 数据手册

SSB43L, SSB44

Vishay General Semiconductor

www.vishay.com

High-Current Density Surface Mount Schottky Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Very low forward voltage drop

• High surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

DO-214AA (SMB)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

4.0 A

30 V, 40 V

100 A

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

V_F

0.38 V, 0.42 V

150 °C

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SSB43L

43L

SSB44

S44

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

Maximum DC blocking voltage

V_DC

Max. average forward rectified current at T_L(fig. 1)

I_F(AV)

4.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

Voltage rate of change (rated V_R)

dV/dt

T_J

10 000

V/μs

°C

Operating junction temperature range

- 65 to + 150

Storage temperature range

T_STG

- 65 to + 150

°C

Revision: 27-Mar-12

Document Number: 88884

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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