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SS15-HE3 PDF预览

SS15-HE3

更新时间: 2024-02-13 20:21:48
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 337K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN

SS15-HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
其他特性:LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SS15-HE3 数据手册

 浏览型号SS15-HE3的Datasheet PDF文件第2页浏览型号SS15-HE3的Datasheet PDF文件第3页浏览型号SS15-HE3的Datasheet PDF文件第4页 
SS12 thru SS16  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
1.0 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Epoxy meets UL 94V-0 flammability rating  
20 V to 60 V  
40 A  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise specified)  
A
PARAMETER  
SYMBOL  
SS12  
SS13  
S3  
SS14  
S4  
SS15  
S5  
SS16  
S6  
UNIT  
Device marking code  
S2  
V
V
V
V
A
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (see Fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)  
A
PARAMETER  
TEST CONDITION SYMBOL  
SS12  
SS13  
SS14  
SS15  
SS16  
UNIT  
Maximum instantaneous forward  
voltage  
at 1.0 A (1)  
VF  
IR  
0.50  
0.75  
5.0  
V
TA = 25 °C  
0.2  
Maximum DC reverse current at rated  
DC blocking voltage (1)  
mA  
TA = 100 °C  
6.0  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number 88746  
20-Feb-06  
www.vishay.com  
1

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