Datasheet > SS12P4C

SS12P4C

更新时间： 2024-09-25 09:06:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	98K
描述
High Current Density Surface Mount Schottky Barrier Rectifier

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SS12P4C 数据手册

New Product

SS12P4C

Vishay General Semiconductor

High Current Density Surface Mount

Schottky Barrier Rectifier

FEATURES

• Very low profile - typical height of 1.1 mm

eSMP^TMSeries

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal impedance

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TO-277A (SMPC)

Anode 1

• Halogen-free according to IEC 61249-2-21 definition

Cathode

Anode 2

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 6.0 A

Base P/N-M3

commercial grade

Base P/NHM3

automotive grade

halogen-free, RoHS compliant, and

V_RRM

40 V

150 A

20 mJ

0.40 V

125 °C

I_FSM

- halogen-free, RoHS compliant, and

E_AS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

V_Fat I_F= 6.0 A

T_Jmax.

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS12P4C

S124C

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

I_FSM

total device

Maximum average forward rectified current (fig. 1) ⁽¹⁾

per diode

6.0

Maximum average forward rectified current ⁽²⁾

total device

3.5

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load per diode

150

Non-repetitive avalanche energy

at T_J= 25 °C, L = 60 mH per diode

E_AS

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

at T_J= 25 °C per diode

I_RRM

1.0

Operating junction and storage temperature range

T_J,T_STG

- 55 to + 125

°C

Notes

(1)

Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink

Free air, mounted on recommended copper pad area

(2)

Document Number: 89141

Revision: 13-May-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SS12P4C相关器件

型号	品牌	获取价格	描述	数据表
SS12P4C_15	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifier
SS12P4CHM3/86A	VISHAY	获取价格	DIODE 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
SS12P4CHM3/87A	VISHAY	获取价格	DIODE 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
SS12P4CHM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 40V V(RRM), Silicon, TO-277A, HALOGEN F
SS12P4CHM3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 40V V(RRM), Silicon, TO-277A, HALOGEN F
SS12P4CHM3-86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifier
SS12P4CHM3-87A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifier
SS12P4C-M3/86A	VISHAY	获取价格	DIODE 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
SS12P4C-M3/87A	VISHAY	获取价格	DIODE 1.75 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
SS12P4C-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifier

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