Datasheet > SS12P4S-M3-87A

SS12P4S-M3-87A

更新时间： 2024-09-27 01:11:59

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威世 - VISHAY		/
页数	文件大小	规格书
5页	83K
描述
SMD Photovoltaic Solar Cell Protection Schottky Rectifier

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SS12P4S-M3-87A 数据手册

SS12P4S

Vishay General Semiconductor

www.vishay.com

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

FEATURES

eSMP^®Series

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Guardring for overvoltage protection

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

TO-277A (SMPC)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_F(AV)

12 A

40 V

commercial grade

V_RRM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

I_FSM

280 A

20 mJ

0.43 V

150 °C

E_AS

V_Fat I_F= 12 A

T_Jmax.



Package

TO-277A (SMPC)

Single die

Diode variations

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS12P4S

124S

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

I_F

12 ⁽¹⁾

Maximum DC forward current (fig. 1)

4.4 ⁽²⁾

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

280

Non-repetitive avalanche energy at I_AS= 2.0 A, T_J= 25 °C

Operating junction and storage temperature range

E_AS

T_OP, T_STG

T_J

°C

-55 to +150

 200

Junction temperature in DC forward current without reverse bias, t  1 h ⁽³⁾

Notes

(1)

Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink

Free air, mounted on recommended copper pad area

Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test

(2)

(3)

Revision: 17-Jan-14

Document Number: 89127

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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