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SPG2336E-G PDF预览

SPG2336E-G

更新时间: 2024-01-01 15:06:51
品牌 Logo 应用领域
韩国光电子 - AUK /
页数 文件大小 规格书
5页 265K
描述
High Brightness Chip LED

SPG2336E-G 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
HTS代码:8541.40.20.00风险等级:5.76
光电设备类型:SINGLE COLOR LEDBase Number Matches:1

SPG2336E-G 数据手册

 浏览型号SPG2336E-G的Datasheet PDF文件第1页浏览型号SPG2336E-G的Datasheet PDF文件第3页浏览型号SPG2336E-G的Datasheet PDF文件第4页浏览型号SPG2336E-G的Datasheet PDF文件第5页 
SPG2336E-G  
Absolute Maximum Ratings  
Characteristic  
(Ta=25oC)  
Unit  
mW  
mA  
Symbol  
PD  
Rating  
110  
Power dissipation  
Forward current  
IF  
30  
*1Peak forward current  
Operating temperature range  
Storage temperature range  
*2Soldering temperature  
IFP  
50  
mA  
-40100  
-40110  
Topr  
Tstg  
Tsol  
240for 10 seconds  
*1.Duty ratio = 1/16, Pulse width = 0.1ms  
*2. Recommended reflow soldering temperature profile  
- Preheating 150to 185within 120 seconds soldering 240within 10 seconds  
Gradual cooling (Avoid quenching)  
Temp ()  
Peak Temp max. 240℃  
max. 10sec  
240  
Preheating area  
150~185, 90±30sec  
Solder area  
220, max. 60sec  
185  
150  
max. 3/sec  
max. -6/sec  
max. 4/sec  
Time from 25to Peak Temperature max. 6min  
60 150 180  
25  
0
240 Time (sec)  
Electrical / Optical Characteristics  
(Ta=25oC)  
Characteristic  
Symbol  
Test Condition  
Min Typ Max Unit  
Forward voltage  
VF  
IF= 20mA  
2.75  
220  
520  
-
-
3.6  
550  
530  
-
V
*3Luminous intensity  
Dominant wavelength  
Spectrum bandwidth  
*4Half angle  
IV  
IF= 20mA  
IF= 20mA  
IF= 20mA  
IF= 20mA  
-
mcd  
nm  
nm  
deg  
525  
30  
±60  
λD  
λ
-
-
θ1/2  
KSD-O8V010-001  
2

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