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SN74CB3T3125PWE4 PDF预览

SN74CB3T3125PWE4

更新时间: 2024-09-27 21:15:23
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管输出元件逻辑集成电路
页数 文件大小 规格书
20页 761K
描述
CB3T/3VT SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14, GREEN, PLASTIC, TSSOP-14

SN74CB3T3125PWE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP, TSSOP14,.25针数:14
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.67系列:CB3T/3VT
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm逻辑集成电路类型:BUS DRIVER
湿度敏感等级:1位数:1
功能数量:4端口数量:2
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:2.5/3.3 V
传播延迟(tpd):0.25 ns认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Bus Driver/Transceivers
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:4.4 mm
Base Number Matches:1

SN74CB3T3125PWE4 数据手册

 浏览型号SN74CB3T3125PWE4的Datasheet PDF文件第2页浏览型号SN74CB3T3125PWE4的Datasheet PDF文件第3页浏览型号SN74CB3T3125PWE4的Datasheet PDF文件第4页浏览型号SN74CB3T3125PWE4的Datasheet PDF文件第5页浏览型号SN74CB3T3125PWE4的Datasheet PDF文件第6页浏览型号SN74CB3T3125PWE4的Datasheet PDF文件第7页 
SN74CB3T3125  
www.ti.com  
SCDS120B FEBRUARY 2003REVISED AUGUST 2012  
QUADRUPLE FET BUS SWITCH  
2.5-V/3.3-V LOW-VOLTAGE BUS SWITCH WITH 5-V-TOLERANT LEVEL SHIFTER  
Check for Samples: SN74CB3T3125  
1
FEATURES  
Output Voltage Translation Tracks VCC  
Latch-Up Performance Exceeds 250 mA Per  
JESD 17  
Supports Mixed-Mode Signal Operation On All  
Data I/O Ports  
ESD Performance Tested Per JESD 22  
5-V Input Down to 3.3-V Output-Level Shift  
With 3.3-V VCC  
2000-V Human-Body Model  
(A114-B, Class II)  
5-V/3.3-V Input Down to 2.5-V Output-Level  
Shift With 2.5-V VCC  
1000-V Charged-Device Model (C101)  
Supports Digital Applications: Level  
Translation, USB Interface, Bus Isolation  
5-V-Tolerant I/Os With Device Powered Up or  
Powered Down  
Ideal for Low-Power Portable Equipment  
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
DGV OR PW PACKAGE  
(TOP VIEW)  
Low ON-State Resistance (ron) Characteristics  
(ron = 5 Typ)  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
1OE  
1A  
VCC  
4OE  
4A  
Low Input/Output Capacitance Minimizes  
Loading (Cio(OFF) = 4.5 pF Typ)  
1B  
Data and Control Inputs Provide Undershoot  
Clamp Diodes  
2OE  
2A  
4B  
3OE  
3A  
Low Power Consumption (ICC = 20 μA Max)  
2B  
VCC Operating Range From 2.3 V to 3.6 V  
8
GND  
3B  
Data I/Os Support 0- to 5-V Signaling Levels  
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)  
RGY PACKAGE  
(TOP VIEW)  
Control Inputs Can Be Driven by TTL or 5-  
V/3.3-V CMOS Outputs  
VCC  
1OE  
Ioff Supports Partial-Power-Down Mode  
Operation  
14  
1
1A  
1B  
4OE  
4A  
2
3
4
5
6
13  
12  
11  
10  
9
2OE  
2A  
4B  
3OE  
3A  
2B  
7
8
GND  
3B  
DESCRIPTION  
The SN74CB3T3125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing  
for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by  
providing voltage translation that tracks VCC. The SN74CB3T3125 supports systems using 5-V TTL, 3.3-V  
LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2003–2012, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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