Datasheet > SMS2312-C

SMS2312-C

更新时间： 2025-08-11 18:29:07

品牌	Logo	应用领域
SECOS		光电二极管
页数	文件大小	规格书
4页	344K
描述
Process : Trench ; Configuration : Single ; Type : N ; VDSS (V) : 20 ; VGS (V) : ?± 8 ; RDS(on) (Ω) : 32 (m??) ; ID (A) : 5 ; PD (W) : 1.4 ; Package : SOT-23 ;

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中文翻译

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数据手册

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SMS2312-C 数据手册

SMS2312-C

5A, 20V, R_DS(ON)31.8m

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SMS2312-C provide the designer with the best

SOT-23

combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness. The SOT-23

package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

FEATURES

⚫

Lower Gate Charge

Simple Drive Requirement

Fast Switching Characteristic

MARKING

S12

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

7 inch

ORDER INFORMATION

Part Number

Type

SMS2312-C

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±8

Continuous Drain Current @t=5s

Pulsed Drain Current

I_D

I_DM

Maximum Power Dissipation @t=5s

Operating Junction & Storage Temperature

P_D

0.35

-55~150

°C

T_J, T_STG

Thermal Resistance Ratings

R_θJA

Thermal Resistance Junction-Ambient

357

°C/W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Aug-2024 Rev. E

Page 1 of 4

12 3 4

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