Datasheet > SMS2333

SMS2333

更新时间： 2024-09-18 01:23:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	138K
描述
P-Channel Enhancement Mode Power MOSFET

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数据手册

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SMS2333 数据手册

SMS2333

-6A , -12V , R_DS(ON)28 mΩ

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SOT-23

The SMS2333 provide the designer with the best

combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness. The SOT-23 package

is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications

such as DC/DC converters.

Top View

C B

FEATURES

ꢀ

Lower Gate Charge

Simple Drive Requirement

Fast Switching Characteristic

Millimeter

REF.

Min.

Max.

3.10

2.65

1.40

1.17

2.04

0.50

Min.

0.09

0.35

0.08

Max.

0.18

0.65

0.20

2.70

2.10

1.20

0.89

1.78

0.30

0.6 REF.

0.95 BSC.

MARKING

S33

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

-12

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

Continuous Drain Current ¹

I_D

-6

Pulsed Drain Current (t=300µs)

Maximum Power Dissipation ²

Maximum Power Dissipation ¹

Thermal Resistance Junction-Ambient ²

Thermal Resistance Junction-Ambient ¹

I_DM

-20

0.35

1.1

P_D

357

113

R_θJA

°C / W

°C

Operating Junction & Storage Temperature

T_J, T_STG

150, -55~150

Note：

1. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.

2. Device mounted on no heat sink.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Jun-2014 Rev.A

Page 1 of 3

12 3

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