Datasheet > SMS123J-C

SMS123J-C

更新时间： 2025-08-10 18:29:07

品牌	Logo	应用领域
SECOS		光电二极管
页数	文件大小	规格书
4页	151K
描述
Process : Trench ; Configuration : Single ; Type : N ; VDSS (V) : 100 ; VGS (V) : ?± 20 ; RDS(on) (Ω) : 6 (??) ; ID (A) : 0.17 ; PD (W) : 0.35 ; Package : SOT-23 ;

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SMS123J-C 数据手册

SMS123J-C

0.17A, 100V, R_DS(ON)6Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-23



Surface Mount Package

High Density Cell Design for Extremely Low R_DS(ON)

Voltage Controlled Small Signal Switch

APPLICATION



Small Servo Motor Controls

Power MOSFET Gate Drivers

Switching Application

MARKING

B123

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

7 inch

ORDER INFORMATION

Part Number

Type

SMS123J-C

Lead (Pb)-free and Halogen-free

MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

V_GS

I_D

Rating

100

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current ¹

Pulsed Drain Current @tp=10μs

Continuous Source-Drain Diode Current

Power Dissipation

0.17

0.68

0.17

0.35

357

I_DM

I_S

P_D

Thermal Resistance from Junction-Ambient ¹

R_θJA

°C/W

Lead Temperature for Soldering Purposes

(1/8’’ from case for 10s)

T_L

260

°C

Operating Junction & Storage Temperature Range

T_J, T_STG

150, -55~150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Aug-2022 Rev. A

Page 1 of 4

12 3 4

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