Datasheet > SMMA511DJ

SMMA511DJ

更新时间： 2022-10-14 17:30:42

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	264K
描述
N- and P-Channel 12 V (D-S) MOSFET

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SMMA511DJ

Vishay Siliconix

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

Dynamic^b

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

_GS= 8 V

_GS= - 8 V

_GS= ꢀ.5 V

V_GS= - ꢀ.5 V

_GS= ꢀ.5 V

_GS= - ꢀ.5 V

V_DS= 6 V, I_D= 5.5 A

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

7.5

6.8

7.5

V_DS= - 6 V, I_D= - ꢀ.3 A

Total Gate Charge

Q_g

ꢀ.5

N-Channel

V_DS= 6 V, I_D= 5.5 A

0.6

0.8

1.ꢀ

2.5

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Q_gs

Q_gd

R_g

P-Channel

_DS= - 6 V, I_D= - ꢀ.3 A

_GS= ꢀ.5 V

_GS= - ꢀ.5 V

f = 1 MHz

ꢀ0

t_d(on)

t_r

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

N-Channel

_DD= 6 V, R_L= 1.ꢀ Ω

I_D≅ ꢀ.ꢀ A, V_GEN= ꢀ.5 V, R_g= 1 Ω

P-Channel

Turn-Off Delay Time

Fall Time

_DD= - 6 V, R_L= 1.8 Ω

I_D≅ - 3.ꢀ A, V_GEN= - ꢀ.5 V, R_g= 1 Ω

Turn-On Delay Time

Rise Time

N-Channel

_DD= 6 V, R_L= 1.ꢀ Ω

I_D≅ ꢀ.ꢀ A, V_GEN= 10 V, R_g= 1 Ω

P-Channel

Turn-Off Delay Time

Fall Time

_DD= - 6 V, R_L= 1.8 Ω

I_D≅ - 3.ꢀ A, V_GEN= - 10 V, R_g= 1 Ω

Source-Drain Body Diode Characteristics

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

ꢀ.5

- ꢀ.5

- 10

1.2

- 1.2

2ꢀ

Continuous Source-Drain Diode

Current

I_S

I_SM

V_SD

t_rr

T_C= 25 °C

Pulse Diode Forward Current

Body Diode Voltage

_S= ꢀ.ꢀ A

0.8

- 0.8

V_GS= 0 V

I_S= - 3.ꢀ A

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

N-Channel

I_F= ꢀ.ꢀ A, dI/dt = 100 A/µs, T_J= 25 °C

Q_rr

t_a

8.5

1ꢀ

8.5

P-Channel

I_F= - 3.ꢀ A, dI/dt = - 100 A/µs, T_J= 25 °C

t_b

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Document Number: 65281

S09-2019-Rev. B, 05-Oct-09

www.vishay.com

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