Datasheet > SML60A16

SML60A16

更新时间： 2024-01-22 11:58:08

品牌	Logo	应用领域
SEME-LAB		高压高电压电源
页数	文件大小	规格书
2页	24K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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SML60A16 数据手册

SML60A16

TO–3 Package Outline.

Dimensions in mm (inches)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

25.15 (0.99)

26.67 (1.05)

6.35 (0.25)

9.15 (0.36)

10.67 (0.42)

11.18 (0.44)

1.52 (0.06)

3.43 (0.135)

POWER MOSFETS

V_DSS

600V

16A

I_D(cont)

(case)

Ω

R_DS(on)0.350

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

• Faster Switching

• Lower Leakage

• TO–3 Hermetic Package

Pin 1 – Gate

Pin 2 – Source

Case – Drain

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Drain – Source Voltage

600

DSS

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

±30

Gate – Source Voltage Transient

±40

GSM

Total Power Dissipation @ T

Derate Linearly

= 25°C

200

case

1.6

W/°C

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

–55 to 150

300

T , T

STG

°C

Avalanche Current (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T = 25°C, L = 9.45mH, R = 25Ω, Peak I = 16A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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