是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | Is Samacsys: | N |
雪崩能效等级(Eas): | 960 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 64 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SML60B18 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60B21 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60B25 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60EUZ06B | SEME-LAB |
获取价格 |
Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp |
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SML60H16 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60H20 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60J35 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60J62 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60L38 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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SML60S16 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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