是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.12 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 1300 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 21 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AD |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 84 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SML60B25 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60EUZ06B | SEME-LAB |
获取价格 |
Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp | |
SML60H16 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60H20 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60J35 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60J62 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60L38 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60S16 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60S18 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML60T38 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |