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SMJ44100-10HLM PDF预览

SMJ44100-10HLM

更新时间: 2024-01-02 02:01:32
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
22页 754K
描述
4MX1 FAST PAGE DRAM, 100ns, CDSO20, 0.350 X 0.675 INCH, CERAMIC, LCC-26/20

SMJ44100-10HLM 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DLCC
包装说明:SON, SOLCC20/26,.35针数:26
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.83
访问模式:FAST PAGE最长访问时间:100 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:SEPARATE
JESD-30 代码:R-CDSO-N20长度:17.145 mm
内存密度:4194304 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:1功能数量:1
端口数量:1端子数量:20
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4MX1
输出特性:3-STATE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:SON封装等效代码:SOLCC20/26,.35
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified刷新周期:1024
筛选级别:38535Q/M;38534H;883B座面最大高度:2.03 mm
自我刷新:NO最大待机电流:0.004 A
子类别:DRAMs最大压摆率:0.08 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8.89 mmBase Number Matches:1

SMJ44100-10HLM 数据手册

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