Datasheet > SMCJ110E3/TR13

SMCJ110E3/TR13

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	475K
描述
Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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SMCJ110E3/TR13 数据手册

SMCJ5.0e3 to SMCJ440CAe3

1500W Transient Voltage Suppressor (TVS) protection device

Main product characteristics

V_WM

V_BR(min)- V_BR(max)

I_PP

5.0V – 440V

6.40V – 543V

156.3A – 2.1A

9.6V – 713V

1500W

RoHS

COMPLIANT

V_CL(MAX)

P_PP

DO-214AB (SMC)

Description and applications

This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or

radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response

time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from

ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can

also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class

levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands

and special applications.

•

RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)

Qualified to automotive grade – AEC Q101

Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.

Maximum ratings and characteristics⁽¹⁾

Symbol

P_PPM

Parameter

Value

1500

Unit

Peak power dissipation with a 10/1000µs waveform ⁽²⁾⁽³⁾(fig.1)

Peak pulse current with a 10/1000µs waveform ⁽²⁾(fig. 3)

I_PPM

See next table

Non repetitive peak forward surge current

I_FSM

200

(8.3ms single half sine wave) unidirectional only ⁽⁴⁾

R_ΘJL

R_ΘJA

T_STG

T_J

Typical thermal resistance junction to lead

Typical thermal resistance junction to ambient

Storage temperature

ºC/W

ºC

-55 to +150

Junction temperature

ºC

(1) All ratings at 25ºC unless specified otherwise

(2) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25ºC per Fig. 2. rating is 300W above 78V.

(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)

(4) Mounted on minimum recommended pad layout

(5) V_F=3.5V for devices of V_BR< 220V and V_F=5.0V maximum for devices of V_BR> 220V

Aug Rev A

1/6

www.Microsemi.com

12 3 4 5 6

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