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SMCG150A-M3/9AT PDF预览

SMCG150A-M3/9AT

更新时间: 2024-11-19 22:54:23
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 87K
描述
TVS DIODE 150V 243V DO215AB

SMCG150A-M3/9AT 数据手册

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SMCG5.0A thru SMCG188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
SMCG (DO-215AB)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLCIATIONS  
VWM  
5.0 V to 188 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (uni-directional)  
6.4 V to 231 V  
6.4 V to 231 V  
1500 W  
V
BR (bi-directional)  
PPPM  
PD  
6.5 W  
IFSM  
200 A  
MECHANICAL DATA  
Case: SMCG (DO-215AB)  
Molding compound meets UL 94 V-0 flammability rating  
TJ max.  
Polarity  
Package  
150 °C  
Uni-directional, bi-directional  
SMCG (DO-215AB)  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMCG188CA).  
Electrical characteristics apply in both directions.  
Polarity: for uni-directional types the band denotes cathode  
end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink TA = 50 °C  
IPPM  
See next table  
6.5  
A
PD  
W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IFSM  
200  
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal  
(2)  
Revision: 16-Jan-18  
Document Number: 89428  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SMCG150A-M3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
SMCG150A-E3/57T VISHAY

完全替代

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG,
SMCG150AHE3/57T VISHAY

类似代替

TVS DIODE 150V 243V DO215AB

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