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SMBJ45C-HE3/52 PDF预览

SMBJ45C-HE3/52

更新时间： 2024-01-03 22:44:00
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
6页 105K
描述
Trans Voltage Suppressor Diode, 600W, 45V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

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SMBJ45C-HE3/52 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214AA包装说明：R-PDSO-C2
针数：2Reach Compliance Code：compliant
风险等级：5.29其他特性：UL RECOGNIZED, HIGH RELIABILITY
最大击穿电压：61.1 V最小击穿电压：50 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：45 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

SMBJ45C-HE3/52 数据手册

 浏览型号SMBJ45C-HE3/52的Datasheet PDF文件第2页浏览型号SMBJ45C-HE3/52的Datasheet PDF文件第3页浏览型号SMBJ45C-HE3/52的Datasheet PDF文件第4页浏览型号SMBJ45C-HE3/52的Datasheet PDF文件第5页浏览型号SMBJ45C-HE3/52的Datasheet PDF文件第6页 
SMBJ5.0 thru SMBJ188CA  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available inuni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-214AA (SMB J-Bend)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
PPPM  
5.0 V to 188 V  
600 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
IFSM (uni-directional only)  
TJ max.  
100 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use C or CA suffix  
(e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
100  
A
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number: 88392  
Revision: 04-Sep-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
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