Datasheet > SMBJ33AHE3/5B

SMBJ33AHE3/5B

更新时间： 2022-09-29 12:04:10

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
6页	121K
描述
TVS DIODE 33V 53.3V DO214AA

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SMBJ33AHE3/5B 数据手册

SMBJ5.0A thru SMBJ188A

Vishay General Semiconductor

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

100

6000

1000

Measured at

Zero Bias

V_R, Measured at Stand-Off

Voltage V_WM

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_P-P

0.2 x 0.2" (5.0 x 5.0 mm)

Copper Pad Areas

Uni-Directional

Bi-Directional

0.1

0.1 µs

1.0 µs

10 µs

100 µs

1.0 ms

10 ms

100

200

t_d- Pulse Width (s)

V_WM- Reverse Stand-Off Voltage (V)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 4 - Typical Junction Capacitance

100

1.0

0.1

0.001

0.01

0.1

1.0

100

1000

100 125

150 175

200

t_p- Pulse Duration (s)

T_J- Initial Temperature (°C)

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 5 - Typical Transient Thermal Impedance

150

200

100

T_J= 25 °C

Pulse Width (t_d)

is defined as the Point

where the Peak Current

decays to 50 % of I_PPM

8.3 ms Single Half Sine-Wave

Uni-Directional Only

t_r= 10 µs

Peak Value

I_PPM

100

Half Value - I_PP

I_PPM

10/1000 µs Waveform

as defined by R.E.A.

t_d

1.0

3.0

4.0

100

2.0

t - Time (ms)

Number of Cycles at 60 Hz

Fig. 3 - Pulse Waveform

Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current

Revision: 30-Jun-2021

Document Number: 88392

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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