SMBJ33A-TR

更新时间： 2024-01-05 13:25:18

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		瞬态抑制器二极管光电二极管 PC 局域网
页数	文件大小	规格书
6页	84K
描述
TRANSILTM

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技术参数
数据手册

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SMBJ33A-TR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.62
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SMBJ33A-TR 数据手册

SMBJ5.0A-TR,CA-TR

SMBJ188A-TR,CA-TR

TRANSIL^TM

FEATURES

PEAK PULSE POWER : 600 W (10/1000µs)

STAND OFF VOLTAGERANGE :

From 5V to 188V.

UNI AND BIDIRECTIONAL TYPES

LOW CLAMPING FACTOR

FAST RESPONSE TIME

JEDEC REGISTERED PACKAGE OUTLINE

DESCRIPTION

The SMBJ series are TRANSIL^TMdiodesdesigned

specifically for protecting sensitive equipment

against transient overvoltages.

SMB

Transil diodes provide high overvoltage protection

by clamping action. Their instantaneous response

to transient overvoltages makes them particularly

suited to protect voltage sensitive devices such

as MOS Technology and low voltage supplied

IC’s.

(JEDEC DO-214AA)

ABSOLUTE MAXIMUM RATINGS (T_amb= 25°C)

Symbol

P_PP

Parameter

Peak pulse power dissipation (see note 1)

Power dissipationon infinite heatsink

Value

600

Unit

Tj initial = T_amb

T_amb= 50°C

I_FSM

Non repetitivesurge peak forward

current for unidirectionaltypes

tp = 10ms

Tj initial = T_amb

100

Storage temperaturerange

Maximum junction temperature

T_stg

T_j

- 65 to + 175

150

°C

T_L

Maximum lead temperaturefor soldering during 10 s.

260

°C

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

THERMAL RESISTANCES

Symbol

R_{th (j-l)}

Parameter

Value

Unit

°C/W

Junction to leads

R_{th (j-a)}

Junction to ambient on printedcircuit on recommendedpad

layout

100

January 1998 Ed: 3

1/6

12 3 4 5 6

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