5秒后页面跳转
SMBJ28AE3 PDF预览

SMBJ28AE3

更新时间: 2024-01-07 23:22:02
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 176K
描述
Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

SMBJ28AE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.06最大击穿电压:34.4 V
最小击穿电压:31.1 V击穿电压标称值:32.75 V
最大钳位电压:45.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
最大重复峰值反向电压:28 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMBJ28AE3 数据手册

 浏览型号SMBJ28AE3的Datasheet PDF文件第1页浏览型号SMBJ28AE3的Datasheet PDF文件第2页浏览型号SMBJ28AE3的Datasheet PDF文件第4页 
SMBJ5.0 thru SMBJ170A, CA, e3  
and SMBG5.0 thru SMBG170A, CA, e3  
SURFACE MOUNT 600 Watt  
Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
BREAKDOWN  
VOLTAGE  
V(BR) @ I(BR)  
Volts  
MAXIMUM  
STANDBY  
CURRENT  
@ VWM  
ID  
μA  
1
1
1
REVERSE  
STAND-OFF  
VOLTAGE  
VWM  
MAXIMUM  
CLAMPING  
VOLTAGE  
@ IPP  
PEAK PULSE  
CURRENT  
(See Fig. 2)  
IPP  
MICROSEMI PART  
NUMBER  
GULL-WING MODIFIED “J”  
I(BR)  
LEAD  
BEND LEAD  
Volts  
48  
48  
51  
51  
54  
54  
58  
58  
60  
60  
64  
64  
70  
70  
75  
75  
78  
78  
85  
85  
90  
90  
100  
100  
110  
110  
120  
120  
130  
130  
150  
150  
160  
160  
170  
170  
Volts  
85.5  
77.4  
91.1  
82.4  
96.3  
87.1  
103  
93.6  
107  
96.8  
114  
103  
125  
113  
134  
121  
139  
126  
151  
137  
160  
146  
179  
162  
196  
177  
214  
193  
231  
209  
268  
243  
287  
259  
304  
275  
Amps  
7.0  
7.7  
6.6  
7.3  
6.2  
6.9  
5.8  
6.4  
5.6  
6.2  
5.3  
5.8  
4.8  
5.3  
4.5  
4.9  
4.3  
4.7  
3.9  
4.4  
3.8  
4.1  
3.4  
3.7  
3.0  
3.4  
2.8  
3.1  
2.6  
2.9  
2.2  
2.5  
2.1  
2.3  
2.0  
2.2  
MIN. MAX.  
53.3 – 65.1  
53.3 – 58.9  
56.7 – 69.3  
56.7 – 62.7  
60.0 – 73.3  
60.0 – 66.3  
64.4 – 78.7  
64.4 – 71.2  
66.7 – 81.5  
66.7 – 73.7  
71.1 – 86.9  
71.1 – 78.6  
77.8 – 95.1  
77.8 – 86.0  
83.3 – 102  
83.3 – 92.1  
86.7 – 106  
86.7 – 95.8  
94.4 – 115  
94.4 – 104  
100 – 122  
100 – 111  
111 – 136  
111 – 123  
122 – 149  
122 – 135  
133 – 163  
133 – 147  
144 – 176  
144 – 159  
167 – 204  
167 – 185  
178 – 218  
178 – 197  
189 – 231  
189 – 209  
mA  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
SMBG48  
SMBJ48  
SMBG48A  
SMBG51  
SMBJ48A  
SMBJ51  
SMBG51A  
SMBJ51A  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
SMBG54  
SMBJ54  
SMBG54A  
SMBG58  
SMBJ54A  
SMBJ58  
SMBG58A  
SMBJ58A  
SMBG60  
SMBJ60  
SMBG60A  
SMBG64  
SMBJ60A  
SMBJ64  
SMBG64A  
SMBJ64A  
SMBG70  
SMBJ70  
SMBG70A  
SMBG75  
SMBJ70A  
SMBJ75  
SMBG75A  
SMBJ75A  
SMBG78  
SMBJ78  
SMBG78A  
SMBG85  
SMBJ78A  
SMBJ85  
SMBG85A  
SMBJ85A  
SMBG90  
SMBJ90  
SMBG90A  
SMBG100  
SMBG100A  
SMBG110  
SMBG110A  
SMBG120  
SMBG120A  
SMBG130  
SMBG130A  
SMBG150  
SMBG150A  
SMBG160  
SMBG160A  
SMBG170  
SMBG170A  
SMBJ90A  
SMBJ100  
SMBJ100A  
SMBJ110  
SMBJ110A  
SMBJ120  
SMBJ120A  
SMBJ130  
SMBJ130A  
SMBJ150  
SMBJ150A  
SMBJ160  
SMBJ160A  
SMBJ170  
SMBJ170A  
1
For Bidirectional device types indicate a C or CA suffix after the part number. (i.e.: SMBG170CA or  
SMBJ170C). Bidirectional capacitance is half that shown in figure 4 at zero volts.  
Microsemi Corp’s SMB series (600 W) surface mountable packages are designed specifically for transient  
voltage suppression. The wide leads assure a large surface contact for good heat dissipation, and a low  
resistance path for surge current flow to ground. These high speed transient voltage suppressors can be  
used to effectively protect sensitive components such as integrated circuits and MOS devices.  
SYMBOLS & DEFINITIONS  
Symbol  
VWM  
PPP  
Definition  
Working Peak (Standoff) Voltage  
Peak Pulse Power  
Symbol  
Definition  
Peak Pulse Current  
IPP  
VC  
Clamping Voltage  
V(BR)  
ID  
Breakdown Voltage  
Standby Current  
I(BR)  
Breakdown Current for V(BR)  
Copyright © 2009  
SA3-37, REV J, 5-24-2009  
Microsemi  
Page 3  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

与SMBJ28AE3相关器件

型号 品牌 描述 获取价格 数据表
SMBJ28A-E3/52 VISHAY TVS DIODE 28V 45.5V DO214AA

获取价格

SMBJ28A-E3/5B VISHAY TVS DIODE 28V 45.5V DO214AA

获取价格

SMBJ28AE3/TR MICROSEMI Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

获取价格

SMBJ28AE3/TR13 MICROSEMI Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

获取价格

SMBJ28AE3/TR7 MICROSEMI Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

获取价格

SMBJ28AE3TR MICROSEMI 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

获取价格