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SMAJ550-E3/2G PDF预览

SMAJ550-E3/2G

更新时间: 2024-01-29 05:46:39
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
4页 90K
描述
Trans Voltage Suppressor Diode, 300W, 495V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

SMAJ550-E3/2G 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-214AC包装说明:ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.74Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY最小击穿电压:550 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:300 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:2.5 W
认证状态:Not Qualified最大重复峰值反向电压:495 V
表面贴装:YES技术:AVALANCHE
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SMAJ550-E3/2G 数据手册

 浏览型号SMAJ550-E3/2G的Datasheet PDF文件第2页浏览型号SMAJ550-E3/2G的Datasheet PDF文件第3页浏览型号SMAJ550-E3/2G的Datasheet PDF文件第4页 
SMAJ530 & SMAJ550  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in Unidirectional polarity only  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Solder Dip 260 °C, 40 seconds  
DO-214AC (SMA)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
APPLICATION NOTES  
MAJOR RATINGS AND CHARACTERISTICS  
• Respect Thermal Resistance (PCB Layout) - as the  
temperature coefficient also contributes to the  
clamping voltage  
VWM  
PPPM  
PD  
530 V, 550 V  
300 W  
2.5 W  
• Select minimum breakdown voltage, so you get  
acceptable power dissipation and PCB tie point  
temperature  
IFSM  
40 A  
Tj max.  
150 °C  
• Devices with higher breakdown voltage will have a  
shorter conduction time and will dissipate less  
power  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
• Clamping voltage is influenced by internal resistance  
- design approximation is 7 V per 100 mA slope  
®
• Keep temperature of TVS lower than TOPSwitch  
as a recommendation  
• Maximum current is determined by the maximum T  
and can be higher than 300 mA  
j
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Epoxy meets UL 94V-0 flammability rating  
• Contact supplier for different clamping voltage/  
current arrangements  
Terminals: Matte tin plated leads, solderable per  
• Minimum breakdown voltage can be customized for  
other applications. Contact supplier  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
®
• TOPSwitch is a registered trademark of Power  
Integrations, Inc.  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SMAJ530  
SMAJ550  
UNIT  
Device marking code  
HD  
SB  
Power dissipation on infinite heatsink (3)  
Peak pulse power dissipation (1,2,4) (see Fig. 1)  
Stand-off voltage  
PD  
PPPM  
2.5  
Minimum 300  
477 495  
- 55 to + 150  
W
W
V
VWM  
Operating junction and storage temperature range  
TJ, TSTG  
°C  
Note:  
(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2  
(2) Mounted on 5.0 mm2 copper pads to each terminal  
(3) Lead temperature at TL = 75 °C  
(4) Peak pulse power waveform is 10/1000 µs  
Document Number 88391  
14-Sep-06  
www.vishay.com  
1

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