SMA6F12AH – SMA6F60AH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJL
TYP.
21
UNIT
°C/W
°C/W
°C/W
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
RӨJA
62
RӨJC
16
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Maximum
Maximum
peak impulse
current
IPPM
Breakdown
blocking
leakage
current
Working
stand-off
voltage
VWM
Maximum
clamping
voltage
VC@IPPM
(V)
voltage
VBR@IT
(V)
Test
current
IT
Marking
code
Part number
IR@VWM
(µA)
(Note 1)
(A)
(Note 1)
(mA)
(V)
tp =10/1000 μs
Min. Max.
13.4 14.8
SMA6F12AH
SMA6F15AH
SMA6F18AH
SMA6F20AH
SMA6F21AH
SMA6F22AH
SMA6F24AH
SMA6F25AH
SMA6F26AH
SMA6F30AH
SMA6F33AH
SMA6F36AH
SMA6F39AH
SMA6F40AH
SMA6F43AH
SMA6F47AH
SMA6F51AH
SMA6F56AH
SMA6F60AH
6F012
6F015
6F018
6F020
6F021
6F022
6F024
6F025
6F026
6F030
6F033
6F036
6F039
6F040
6F043
6F047
6F051
6F056
6F060
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
12
15
18
20
21
22
24
25
26
30
33
36
39
40
43
47
51
56
60
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
30.8
24.6
20.5
18.5
17.6
16.8
15.4
14.8
14.2
12.3
11.2
10.3
9.5
19.5
24.4
29.2
32.5
34.1
35.7
39.0
40.6
42.2
48.7
53.6
58.4
63.3
64.9
69.8
76.3
82.8
90.9
97.4
16.8 18.5
20.1 22.2
22.4 24.7
23.5 25.9
24.6 27.2
26.8 29.6
27.9 30.9
29.1 32.1
33.5 37.1
36.9 40.8
40.2 44.5
43.6 48.2
44.7 49.4
48.1 53.1
52.5 58.1
57.0 63.0
62.6 69.2
67.1 74.1
9.2
8.6
7.9
7.2
6.6
6.2
Note:
1. Pulse test with PW=30 ms
2
Version: A1805