SLVG2.8

更新时间： 2024-01-26 19:16:30

品牌	Logo	应用领域
商升特 - SEMTECH		瞬态抑制器二极管电视光电二极管局域网
页数	文件大小	规格书
7页	81K
描述
EPD TVS⑩ Diodes For ESD and Latch-Up Protection

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技术参数
数据手册

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SLVG2.8 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	R-PDSO-G4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.83	外壳连接：	ANODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e0	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
认证状态：	Not Qualified	最大重复峰值反向电压：	2.8 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	ZENER	端子面层：	TIN LEAD
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SLVG2.8 数据手册

SLVE2.8 & SLVG2.8

PROTECTION PRODUCTS

Applications Information (continued)

EPD TVS™ Characteristics

The SLV series is constructed using Semtech’s propri-

etary EPD technology. The structure of the EPD TVS is

vastly different from the traditional pn-junction devices.

At voltages below 5V, high leakage current and junction

capacitance render conventional avalanche technology

impractical for most applications. However, by utilizing

the EPD technology, the SLVE2.8 & SLVG2.8 can

effectively operate at 2.8V while maintaining excellent

electrical characteristics.

I_SB

I_PT

I _R

V_BRR

V_C

RWM

I _BRR

The EPD TVS employs a complex nppn structure in

contrast to the pn structure normally found in tradi-

tional silicon-avalanche TVS diodes. The EPD mecha-

nism is achieved by engineering the center region of

the device such that the reverse biased junction does

not avalanche, but will “punch-through” to a conduct-

ing state. This structure results in a device with supe-

rior dc electrical parameters at low voltages while

maintaining the capability to absorb high transient

currents.

EPD TVS VI Characteristic Curve

The IV characteristic curve of the EPD device is shown

in Figure 1. The device represents a high impedance

to the circuit up to the working voltage (V_RWM). During a

transient event, the device will begin to conduct as it is

biased in the reverse direction. When the punch-

through voltage (V_PT) is exceeded, the device enters a

low impedance state, diverting the transient current

away from the protected circuit. When the device is

conducting current, it will exhibit a slight “snap-back” or

negative resistance characteristic due to its structure.

This must be considered when connecting the device

to a power supply rail. To return to a non-conducting

state, the current through the device must fall below

the snap-back current (approximately < 50mA).

www.semtech.com

2001 Semtech Corp.

1 2 3 456 7

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与SLVG2.8相关器件

型号	品牌	描述	获取价格	数据表
SLVG2.8.TC	SEMTECH	Trans Voltage Suppressor Diode, 300W, 2.8V V(RWM), Unidirectional, 2 Element, Silicon, TO-	获取价格
SLVG2.8.TCT	SEMTECH	Trans Voltage Suppressor Diode, 300W, Unidirectional, 2 Element, Silicon, TO-253AA, LEAD F	获取价格
SLVG2.8K	MICROSEMI	Trans Voltage Suppressor Diode, 2.8V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格
SLVG2.8KE3	MICROSEMI	Trans Voltage Suppressor Diode, 2.8V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格
SLVG2.8TC	SEMTECH	EPD TVS⑩ Diodes For ESD and Latch-Up Protecti	获取价格
SLVG3.3	SEMTECH	Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格

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