Datasheet > SLB7N80C

SLB7N80C

更新时间： 2024-10-01 18:09:59

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1285K
描述
TO-263

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中文翻译

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数据手册

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SLB7N80C 数据手册

SLB7N80C

800V N-Channel MOSFET

Features

General Description

- 7.0A, 800V, R_DS(on)= 1.4Ω@V_GS= 10 V

- Low gate charge ( typical 40nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

TO-263

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB7N80C

Units

Drain-Source Voltage

800

7.0

4.2

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

650

7.0

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

16.7

V/ns

dv/dt

4.5

227

P_D

- Derate above 25℃

1.8

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLB7N80C

0.55

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.5

R_θJS

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.1 Mar. 2023

12 3 4 5 6 7 8

中文翻译

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