Datasheet > SL32-AL-TH

SL32-AL-TH

更新时间： 2022-02-26 14:38:07

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PACELEADER		/
页数	文件大小	规格书
4页	594K
描述
3.0A LOW VF SCHOTTKY BARRIER

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SL32-AL-TH 数据手册

& SL34-AL

SL32-AL

3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V

SMA-L PACKAGE

Package outline

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

SMA-L

• Low profile surface mounted application in order to

0.209(5.3)

0.185(4.7)

optimize board space.

0.012(0.3) Typ.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

0.114(2.9)

0.091(2.3)

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

Moisture Sensitivity Level 1

•

0.080(2.0)

0.063(1.6)

Mechanical data

0.032(0.8) Typ.

0.032 (0.8) Typ.

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, SMA-L

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Dimensions in inches and (millimeters)

• Polarity : Indicated by cathode band

• Mounting Position : Any

• Weight : Approximated 0.05 gram

Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)

MAX.

UNIT

MIN.

TYP.

PARAMETER

CONDITIONS

Symbol

I_O

3.0

Forward rectified current

See Fig.2

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

I_FSM

Forward surge current

V_R= V_RRMT_J= 25^OC

I_R

1.0

Reverse current

C_J

^OC

Diode junction capacitance

Storage temperature

300

f=1MHz and applied 4V DC reverse voltage

+150

-55

T_STG

Operating

V_RRM

(V)

V_R

(V)

V_RMS

(V)

*1 Repetitive peak reverse voltage

*2 RMS voltage

V_F

SYMBOLS

temperature

T_J, (^OC)

(V)

0.38

SL32-AL

SL34-AL

*3 Continuous reverse voltage

*4 Maximum forward voltage@I_F=3.0A

-55 to +100

0.40

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