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SKY65050-372LF PDF预览

SKY65050-372LF

更新时间: 2024-02-13 20:13:56
品牌 Logo 应用领域
思佳讯 - SKYWORKS 晶体射频和微波射频放大器微波放大器晶体管PC
页数 文件大小 规格书
12页 155K
描述
0.45-6.0 GHz Low Noise Transistor

SKY65050-372LF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:2.20 X 1.35 MM, 1.10 MM HEIGHT, GREEN, SC-70, 4 PIN
Reach Compliance Code:compliant风险等级:5.7
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:278648Samacsys Pin Count:4
Samacsys Part Category:TransistorSamacsys Package Category:Other
Samacsys Footprint Name:SKY65050-372LF-2Samacsys Released Date:2019-09-13 11:54:17
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:13.5 dB
最大输入功率 (CW):10 dBmJESD-609代码:e3
最大工作频率:6000 MHz最小工作频率:450 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND MEDIUM POWER端子面层:Tin (Sn)
Base Number Matches:1

SKY65050-372LF 数据手册

 浏览型号SKY65050-372LF的Datasheet PDF文件第1页浏览型号SKY65050-372LF的Datasheet PDF文件第3页浏览型号SKY65050-372LF的Datasheet PDF文件第4页浏览型号SKY65050-372LF的Datasheet PDF文件第5页浏览型号SKY65050-372LF的Datasheet PDF文件第6页浏览型号SKY65050-372LF的Datasheet PDF文件第7页 
DATA SHEET • SKY65050-372LF LOW NOISE TRANSISTOR  
Table 1. SKY65050-372LF Signal Descriptions  
Pin #  
Name  
SOURCE  
Description  
Pin #  
Name  
SOURCE  
Description  
1
Source lead. Provides DC self-biasing point  
and AC ground.  
3
Source lead. Provides DC self-biasing point  
and AC ground.  
2
DRAIN  
RF output. Requires external matching  
network for optimum performance. Supply  
voltage required through external RF choke.  
4
GATE  
RF input. Requires external matching  
network for optimum performance.  
Table 2. Self-Biasing Resistors  
Resistor Value (Ω)  
Drain Current (mA)  
130  
47  
27  
20  
15  
10  
5
10  
15  
20  
25  
30  
desired negative VGS value. This simplifies the design by  
eliminating the need for a second DC supply.  
Functional Description  
The SKY65050-372LF is a depletion mode pHEMT designed for  
low noise, high frequency applications. The SKY65050-372LF has  
a typical NF of 0.65 dB tested at the 2.4 GHz wireless LAN  
frequency band. A gain of 15.5 dB typical is achieved using the  
same circuit. If the frequency of operation is lowered to the 1 GHz  
range, NF performance of the device can approach 0.5 dB  
including input matching network losses.  
Table 2 provides the resistor values used to properly bias the  
SKY65050-372LF.  
RF Matching Networks  
The SKY65050-372LF Evaluation Board assembly diagram is  
shown in Figure 12 and a circuit schematic is provided in  
Figure 13. The schematic shows the recommended RF matching  
network used for the 2.4 GHz wireless LAN frequency band. The  
network was designed using de-embedded s- and n-parameters.  
The circuit was primarily tuned for gain, NF, and input and output  
return loss, while maintaining proper stability.  
De-embedded scattering and noise parameters are provided in  
addition to typical circuit topologies for commonly used frequency  
bands. With an appropriate circuit, the SKY65050-372LF can be  
used for many applications from 450 MHz up to 6 GHz. The  
compact SC-70 package makes the SKY65050-372LF an ideal  
low noise and low cost solution.  
Optimal noise performance is attained when the impedance  
presented to the input of the amplifier is equal to its minimum NF  
impedance point. Components C1, C2, C3, L1, and L2 shown in  
Figures 12 and 13 provide the necessary impedance match for NF  
and input return loss. Circuit board and input matching structure  
losses on the input of the amplifier directly add to the overall NF  
of the amplifier. It is critical to minimize RF trace lengths and to  
use high-Q components to achieve optimal NF performance.  
Biasing  
To properly bias a depletion mode pHEMT, both the gate and  
drain of the device must be properly biased. At VGS = 0 V and  
VDS ≥ 2 V, the device is in a saturated state and draws the  
maximum amount of current, IDSS. The device typically achieves  
the best noise performance at VDS = 3 V and IDSS = 15 mA. To  
control IDS, VGS must be biased with a negative voltage supply.  
Components R2 and C14 provide self biasing for the device and  
RF grounding for one of the two source leads. Components C5  
and L3 are placed on the opposing source lead and are used to  
tune the transistor’s source inductance.  
To eliminate the need for a negative DC supply, self-biasing  
should be used when a resistor is placed between one of the  
source leads and ground. A bypass capacitor should be placed in  
parallel to this resistor to provide an RF ground and to ensure  
performance remains unchanged at the operating frequency.  
When current flows from drain to source and through the resistor,  
the source voltage becomes biased above DC ground. The gate  
pin of the device should be left unbiased at 0 V, which creates the  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
November 12, 2009 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200967F  
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