Datasheet > SKW30N60_08

SKW30N60_08

更新时间： 2022-12-18 10:16:57

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
13页	320K
描述
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SKW30N60_08 数据手册

SKW30N60

160A

140A

120A

100A

80A

t_p=4µs

15µs

I_c

100A

10A

50µs

200µs

T_C=80°C

1ms

60A

T_C=110°C

40A

I_c

20A

0.1A

10V

100V

1000V

10Hz

100Hz

1kHz

10kHz

100kHz

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

Figure 2. Safe operating area

switching frequency

(D = 0, T_C= 25°C, T_j≤ 150°C)

(T_j≤ 150°C, D = 0.5, V_CE= 400V,

_GE= 0/+15V, R_G= 11Ω)

300W

250W

200W

150W

100W

50W

60A

50A

40A

30A

20A

10A

Limited by bond wire

25°C

50°C

75°C

100°C 125°C

25°C

50°C

75°C

100°C 125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≤ 15V, T_j≤ 150°C)

Rev. 2_2 Sep 08

1 2 345 6 7...13

下载PDF

与SKW30N60_08相关器件

型号	品牌	描述	获取价格	数据表
SKW30N60HS	INFINEON	HIGH SPEED IGBT IN NPT-TECHNOLOGY	获取价格
SKW30N60HS_08	INFINEON	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation	获取价格
SKW30N60HSFKSA1	INFINEON	Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL	获取价格
SKWD7000/02	SEMIKRON	Rectifier Diode, 1 Phase, 1 Element, 7000A, 200V V(RRM), Silicon,	获取价格
SKWR005	CRMICRO	die	获取价格
SKWR007	CRMICRO	die	获取价格